鄭曉明，男，漢族，山西呂梁人，講師，碩士生導師。2013年畢業于長治學院物理系，獲學士學位，2015年畢業于國防科技大學理學院物理學專業，獲碩士學位，2020年畢業于中南大學物理與電子學院物理學業，獲博士學位，同年入職廈門大學做博士後，2022年加入2003网站太阳集团。

主講課程：《工程光學》《機械視覺》。

科學研究：二維半導體電輸運及熱輸運特性調控研究；二維半導體對稱性調控研究。

聯系方式：Email: 836436625@qq.com; 1080098@hnust.edu.cn。

近期承擔的科學項目：主持湖南省自然科學基金面上項目《紫外臭氧空穴摻雜對MoTe₂熱電性能的調控》No.2024JJ5164，(2024.01-2026.12）。

近期發表的科研論文

(1) Tunable in-plane anisotropy of quasiparticles in twisted MoS₂/CrOCl heterostructures. Applied Physics Letters, 2024,124:24

(2) Van der Waals Interlayer Coupling Induces Distinct Linear Dichroism in WSe₂ Photodetectors. Advanced Optical Materials, 2023, 11(4): 2201962.

(3) Symmetry Engineering Induced In-plane Polarization in MoS₂ through Van der Waals Interlayer Coupling. Advanced Functional Materials, 2022, 32(28): 2202658.

(4) Highly anisotropic thermal conductivity of few-layer CrOCl for efficient heat dissipation in graphene device. Nano Research, 2022, 15(10): 9377-9385.

(5) Thickness Dependent Anisotropy of In-Plane Raman Modes under Different Temperatures in Supported Few-layer WTe₂. Applied Physics Letters, 2021, 119(6): 063104.  

(6) Enormous enhancement in electrical performance of few-layered MoTe₂ due to Schottky barrier reduction induced by ultraviolet ozone treatment. Nano Research, 2020, 13(4): 952-958.

(7) A homogeneous p-n junction diode by selective doping of few layer MoSe₂ using ultraviolet ozone for high-performance photovoltaic devices. Nanoscale, 2019, 11(28): 13469-13476.

(8) Controlled layer-by-layer oxidation of MoTe₂ via O₃ exposure. ACS Applied Materials & Interfaces, 2018, 10(36): 30045-30050.

(9) High electrical conductivity of individual epitaxially grown MoO₂ nanorods. Applied Physics Letters, 2017, 111(9): 093505-093510.

(10) The Raman redshift of graphene impacted by gold nanoparticles. AIP Advances, 2015, 5(5): 057133.